3VD379600YL hangzhou?silan?microelectronics?co.,ltd rev:1.0??????2008.06.06 http:?www.silan.com.cn???????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????page?1?of?1 3VD379600YL?high?voltage?mosfet?chips description ? ? 3VD379600YL?is?a?high?voltage?n-channel enhancement?mode?power?mos-fet?chip?fabricated in?advanced?silicon?epitaxial?planar?technology; ? ? advanced?termination?scheme?to?provide?enhanced voltage-blocking?capability; ? ? avalanche?energy?specified; ? ? source-to-drain?diode?recovery?time?comparable?to a?discrete?fast?recovery?diode; ? ? the?chips?may?packaged?in?to-220?type; ? ? the?packaged?product?is?widely?used?in?ac-dc power?suppliers,?dc-dc?converters?and?h-bridge pwm?motor?drivers; ? ? die?size:?3.8mm*2.8mm; ? ? chip?thickness:?30020 m m; ? top?metal?:?al,??backside?metal?:?ag. pad 1: gate pad 3: source 3 1 chip?topography absolute?maximum?ratings??(t amb =25 c) parameter symbol ratings unit drain-source?voltage v ds 600 v gate-source?voltage v gs 30 v drain?current i d 4 a power?dissipation?(to-220?package) p d 106 w operation?junction?temperature t j 150 c storage?temperature tstg -55 +150 c electrical?characteristics?(t amb =25 c) parameter symbol test?conditions min typ max unit drain?-source?breakdown?voltage b vdss v gs =0v,?i d =250a 600 - - v gate?threshold?voltage v th v gs =?v ds ,?i d =250a 2 - 4 v drain-source?leakage?current i dss v ds =600v,?v gs =0v - - 1 a static?drain-?source?on?state resistance r ds(on) v gs =10v,?i d =2a - - 2.1 w gate-source?leakage?current i gss ?v gs =30v,?v ds =0v - - 100 na source-drain?diode?forward?on voltage v fsd ?i s =4a,??v gs =0v - - 1.4 v
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